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IPP12CN10N G
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 67A TO-220
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Inventory: 2853
Minimum: 1
Total Price: USD $11.12
Unit Price: USD $11.119326
≥1 USD $11.119326
≥10 USD $10.489923
≥100 USD $9.896156
≥500 USD $9.335992
≥1000 USD $8.807553
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.9m Ω @ 67A, 10V
Vgs(th) (Max) @ Id 4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds 4320pF @ 50V
Current - Continuous Drain (Id) @ 25°C 67A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 67A
Drain-source On Resistance-Max 0.0129Ohm
Pulsed Drain Current-Max (IDM) 268A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 154 mJ
Compliance
RoHS Status RoHS Compliant
Alternative Model
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