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IRF7822TRPBF
Infineon TechnologiesRoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 18A 8-SOIC
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Inventory: 3878
Minimum: 1
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 6.5MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 18A
Number of Elements 1
Power Dissipation-Max 3.1W Ta
Power Dissipation 3.1W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 16V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Rise Time 5.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Input Capacitance 5.5nF
Drain to Source Resistance 6.5mOhm
Rds On Max 6.5 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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