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FDS6162N3
ON SemiconductorRoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
PowerTrench? Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 21A Ta 21A 3W 55ns
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Inventory: 1784
Minimum: 1
Total Price: USD $8.39
Unit Price: USD $8.393232
≥1 USD $8.393232
≥10 USD $7.918136
≥100 USD $7.469947
≥500 USD $7.047113
≥1000 USD $6.648227
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series PowerTrench?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Current Rating 21A
Number of Elements 1
Power Dissipation-Max 3W Ta
Power Dissipation 3W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5mOhm @ 21A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5521pF @ 10V
Current - Continuous Drain (Id) @ 25°C 21A Ta
Gate Charge (Qg) (Max) @ Vgs 73nC @ 4.5V
Rise Time 25ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 5.521nF
Drain to Source Resistance 45mOhm
Rds On Max 4.5 mΩ
Alternative Model
No data
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