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IRFD010PBF
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 50V 1.7A 4-DIP
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Inventory: 8803
Minimum: 1
Total Price: USD $7.96
Unit Price: USD $7.9572
≥1 USD $7.9572
≥10 USD $6.5284
≥100 USD $6.3251
≥500 USD $6.12085
≥1000 USD $5.9166
Technical Details
Supply Chain
Factory Lead Time 111 Weeks
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 200mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Tc
Power Dissipation 1W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 200mOhm @ 860mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 50V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 1.7A
Threshold Voltage 4V
Drain to Source Breakdown Voltage 50V
Input Capacitance 250pF
Drain to Source Resistance 200mOhm
Rds On Max 200 mΩ
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