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IRLR014NPBF
Infineon TechnologiesRoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 10A DPAK
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Inventory: 7642
Minimum: 1
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 4
Supplier Device Package D-Pak
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 140mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 10A
Number of Elements 1
Power Dissipation-Max 28W Tc
Element Configuration Single
Power Dissipation 28W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 265pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 5V
Rise Time 47ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 10A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Input Capacitance 265pF
Drain to Source Resistance 140mOhm
Rds On Max 140 mΩ
Nominal Vgs 1 V
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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