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Infineon TechnologiesRoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 55V 30A TO-262
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Inventory: 947
Minimum: 1
Total Price: USD $6.79
Unit Price: USD $6.78585
≥1 USD $6.78585
≥10 USD $5.56795
≥100 USD $5.3941
≥500 USD $5.22025
≥1000 USD $5.0464
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 1997
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 35MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Current Rating 30A
Number of Elements 1
Power Dissipation-Max 3.8W Ta 68W Tc
Power Dissipation 68W
Turn On Delay Time 8.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 880pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 5V
Rise Time 100ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±16V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Input Capacitance 880pF
Drain to Source Resistance 60mOhm
Rds On Max 35 mΩ
Dimensions
Height 9.65mm
Length 10.668mm
Width 4.826mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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