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IRF630NLPBF
Infineon TechnologiesRoHS
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Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 9.3A TO-262
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Inventory: 6181
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.55385
≥1 USD $0.55385
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.4123
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package TO-262
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 300mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 9A
Number of Elements 1
Power Dissipation-Max 82W Tc
Element Configuration Single
Power Dissipation 82W
Turn On Delay Time 7.9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 575pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.3A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 9.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 575pF
Drain to Source Resistance 300mOhm
Rds On Max 300 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 9.65mm
Length 10.668mm
Width 4.826mm
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