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ZVN3310FTC
Diodes IncorporatedRoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 100MA SOT23-3
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Inventory: 3380
Minimum: 1
Total Price: USD $0.53
Unit Price: USD $0.528255
≥1 USD $0.528255
≥10 USD $0.498357
≥100 USD $0.470141
≥500 USD $0.443533
≥1000 USD $0.418425
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 7.994566mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 40
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 330mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330mW
Turn On Delay Time 3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100mA Ta
Rise Time 5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 4 ns
Continuous Drain Current (ID) 100mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Feedback Cap-Max (Crss) 5 pF
Dimensions
Height 1.02mm
Length 3.04mm
Width 1.4mm
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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