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FDB8030L
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
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Inventory: 8279
Minimum: 1
Total Price: USD $0.69
Unit Price: USD $0.69065
≥1 USD $0.69065
≥10 USD $0.56715
≥100 USD $0.5491
≥500 USD $0.53105
≥1000 USD $0.51395
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Technical
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 3.5MOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 80A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 187W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 187W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10500pF @ 15V
Current - Continuous Drain (Id) @ 25°C 80A Ta
Gate Charge (Qg) (Max) @ Vgs 170nC @ 5V
Rise Time 185 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 200 ns
Turn-Off Delay Time 160 ns
Continuous Drain Current (ID) 80A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.5 V
Dimensions
Height 4.83mm
Length 10.97mm
Width 9.65mm
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
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