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IRF7422D2PBF
Infineon TechnologiesRoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 4.3A 8-SOIC
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Inventory: 3047
Minimum: 1
Total Price: USD $0.3
Unit Price: USD $0.3002
≥1 USD $0.3002
≥10 USD $0.247
≥100 USD $0.23845
≥500 USD $0.23085
≥1000 USD $0.22325
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series FETKY?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -20V
Technology MOSFET (Metal Oxide)
Current Rating -4.3A
Number of Elements 1
Power Dissipation-Max 2W Ta
Element Configuration Single
Power Dissipation 2W
Turn On Delay Time 8.1 ns
Forward Current 4A
FET Type P-Channel
Rds On (Max) @ Id, Vgs 90m Ω @ 2.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
Rise Time 26 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Forward Voltage 520mV
Fall Time (Typ) 33 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) -4.3A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4.6A
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage -20V
Max Forward Surge Current (Ifsm) 20A
FET Feature Schottky Diode (Isolated)
Nominal Vgs 4 V
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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