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IRF7805PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description HEXFET? Tube Surface Mount N-Channel Mosfet Transistor 13A Ta 13A 2.5W 16ns
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Inventory: 2430
Minimum: 1
Total Price: USD $0.98
Unit Price: USD $0.982823
≥1 USD $0.982823
≥10 USD $0.927188
≥100 USD $0.874709
≥500 USD $0.825193
≥1000 USD $0.778485

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 11MOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 13A
Time@Peak Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A Ta
Gate Charge (Qg) (Max) @ Vgs 31nC @ 5V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 3 V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

Dimensions

Height 1.4986mm
Length 4.9784mm
Width 3.9878mm

Alternative Model

No data

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