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2N7000RLRA

ON Semiconductor
RoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Tape & Reel (TR) Through Hole N-Channel Single Mosfet Transistor 200mA Ta 200mA 350mW 10ns
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Total Price: USD $0.28
Unit Price: USD $0.2774
≥1 USD $0.2774
≥10 USD $0.228
≥100 USD $0.2204
≥500 USD $0.21375
≥1000 USD $0.20615

Technical Details

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 6 days ago)

Physical

Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 200mA
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 350mW Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 350mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Ta
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 5Ohm
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

No data

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