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MTD6N15T4
ON SemiconductorRoHS
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Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 150V 6A N-Channel
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Inventory: 4446
Minimum: 1
Total Price: USD $0.85
Unit Price: USD $0.85215
≥1 USD $0.85215
≥10 USD $0.6992
≥100 USD $0.67735
≥500 USD $0.6555
≥1000 USD $0.63365
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Max Power Dissipation 1.25W
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 6A
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 6A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 20A
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