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VN2222LL
ON SemiconductorRoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Tape & Box (TB) Through Hole N-Channel Single Mosfet Transistor 150mA Ta 150mA 400mW 10ns
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Inventory: 6317
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.116269
≥1 USD $0.116269
≥10 USD $0.109685
≥100 USD $0.103481
≥500 USD $0.097623
≥1000 USD $0.092091
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2004
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 150mA
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 400mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 60pF @ 25V
Current - Continuous Drain (Id) @ 25°C 150mA Ta
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 150mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.15A
Drain to Source Breakdown Voltage 60V
Feedback Cap-Max (Crss) 5 pF
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
No data
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