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BSP88E6327
Infineon TechnologiesRoHS
/
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
SIPMOS? Tape & Reel (TR) Surface Mount N-Channel Mosfet Transistor 350mA Ta 350mA 1.7W Ta 10ns
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Inventory: 1575
Minimum: 1
Total Price: USD $1.11
Unit Price: USD $1.107779
≥1 USD $1.107779
≥10 USD $1.045079
≥100 USD $0.98592
≥500 USD $0.930116
≥1000 USD $0.877465
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series SIPMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Voltage - Rated DC 240V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 320mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.7W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6 Ω @ 350mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 108μA
Input Capacitance (Ciss) (Max) @ Vds 95pF @ 25V
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 2.8V 4.5V
Vgs (Max) ±20V
Continuous Drain Current (ID) 350mA
Drain Current-Max (Abs) (ID) 0.35A
Drain-source On Resistance-Max 6Ohm
Pulsed Drain Current-Max (IDM) 1.4A
Alternative Model
No data
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