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BSP129E6327
Infineon TechnologiesRoHS
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Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 240V 350MA SOT223
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Inventory: 9643
Minimum: 1
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series SIPMOS?
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Voltage - Rated DC 240V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 280mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Power Dissipation 1.8W
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 350mA, 10V
Vgs(th) (Max) @ Id 1V @ 108μA
Input Capacitance (Ciss) (Max) @ Vds 108pF @ 25V
Current - Continuous Drain (Id) @ 25°C 350mA Ta
Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 5V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 350mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain-source On Resistance-Max 20Ohm
Pulsed Drain Current-Max (IDM) 0.6A
FET Feature Depletion Mode
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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