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IPP034NE7N3GXKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description Single N-Channel 75 V 3.4 mOhm 88 nC OptiMOS? Power Mosfet - TO-220-3
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Inventory: 8926
Minimum: 1
Total Price: USD $2.7
Unit Price: USD $2.696343
≥1 USD $2.696343
≥10 USD $2.543715
≥100 USD $2.399734
≥500 USD $2.263904
≥1000 USD $2.135756

Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 214W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.4m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 155μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Rise Time 85 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 100A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 75V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 640 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

STPS20150CG
STMicroelectronics

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