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IPA60R165CPXKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 21A TO220-3
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Inventory: 5802
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.370816
≥1 USD $0.370816
≥10 USD $0.349826
≥100 USD $0.330024
≥500 USD $0.311345
≥1000 USD $0.29373

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 34W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 34W
Case Connection ISOLATED
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 660μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 100V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Rise Time 5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 21A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 522 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

IXFN52N90P
IXYS

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