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IPP027N08N5AKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-Ch 80V 120A TO220-3
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Inventory: 7993
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.540915
≥1 USD $0.540915
≥10 USD $0.5103
≥100 USD $0.481419
≥500 USD $0.454163
≥1000 USD $0.428461
Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Compliance
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 6.000006g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series OptiMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 214W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 154μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 8970pF @ 40V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Rise Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0027Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 374 mJ
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