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FCA20N60-F109
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3, SC-65-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 20A TO-3P
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Inventory: 3924
Minimum: 1
Total Price: USD $1.83
Unit Price: USD $1.834509
≥1 USD $1.834509
≥10 USD $1.730673
≥100 USD $1.632698
≥500 USD $1.540291
≥1000 USD $1.453099
Technical Details
Supply Chain
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 190MOhm
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Base Part Number FCA20N60
Number of Elements 1
Power Dissipation-Max 208W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 208W
Turn On Delay Time 62 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Rise Time 140ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 230 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 60A
Avalanche Energy Rating (Eas) 690 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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