Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
IPW60R024P7XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
HIGH POWER_NEW
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 9138
Minimum: 1
Total Price: USD $16.29
Unit Price: USD $16.294278
≥1 USD $16.294278
≥10 USD $15.371962
≥100 USD $14.501848
≥500 USD $13.68099
≥1000 USD $12.9066
Technical Details
Supply Chain
Factory Lead Time 18 Weeks
Technical
Operating Temperature -55°C~150°C TJ
Series CoolMOS? P7
Part Status Active
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 291W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 42.4A, 10V
Vgs(th) (Max) @ Id 4V @ 2.03mA
Input Capacitance (Ciss) (Max) @ Vds 7144pF @ 400V
Current - Continuous Drain (Id) @ 25°C 101A Tc
Gate Charge (Qg) (Max) @ Vgs 164nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 101A
Drain-source On Resistance-Max 0.024Ohm
Pulsed Drain Current-Max (IDM) 386A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 406 mJ
Physical
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Alternative Model
Recommended For You