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FCH35N60
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 600V N-Channel SuperFET
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Pricing & Ordering
Inventory: 2709
Minimum: 1
Total Price: USD $4.98
Unit Price: USD $4.97705
≥1 USD $4.97705
≥10 USD $4.08405
≥100 USD $3.95675
≥500 USD $3.8285
≥1000 USD $3.7012
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Dimensions
Height 20.82mm
Length 15.87mm
Width 4.82mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series SuperMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 312.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 312.5W
Turn On Delay Time 34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 98m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6640pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V
Rise Time 120 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 73 ns
Turn-Off Delay Time 105 ns
Continuous Drain Current (ID) 35A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.098Ohm
Drain to Source Breakdown Voltage 600V
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