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IPW65R150CFDAFKSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V TO247
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Inventory: 5157
Minimum: 1
Total Price: USD $18.17
Unit Price: USD $18.166697
≥1 USD $18.166697
≥10 USD $17.138396
≥100 USD $16.168301
≥500 USD $15.253104
≥1000 USD $14.389724

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2008
Series Automotive, AEC-Q101, CoolMOS?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Power Dissipation-Max 195.3W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 12.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 9.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 900μA
Input Capacitance (Ciss) (Max) @ Vds 2340pF @ 100V
Current - Continuous Drain (Id) @ 25°C 22.4A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 52.8 ns
Continuous Drain Current (ID) 22.4A
Gate to Source Voltage (Vgs) 30V
Max Dual Supply Voltage 650V
Drain-source On Resistance-Max 0.15Ohm
Pulsed Drain Current-Max (IDM) 72A
Avalanche Energy Rating (Eas) 614 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 21.1mm
Length 16.03mm
Width 5.16mm

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