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SIHG24N65E-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 24A TO247AC
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Inventory: 4668
Minimum: 1
Total Price: USD $1.24
Unit Price: USD $1.2445
≥1 USD $1.2445
≥10 USD $1.02125
≥100 USD $0.9899
≥500 USD $0.9576
≥1000 USD $0.9253
Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247AC
Weight 38.000013g
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.31mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 145mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 250W Tc
Element Configuration Single
Power Dissipation 250W
Turn On Delay Time 24 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 100V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Rise Time 84ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 69 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 24A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 2.74nF
Drain to Source Resistance 145mOhm
Rds On Max 145 mΩ
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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