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IXTP60N20T
IXYSRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET Trench POWER MOSFETs 200v, 60A
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Inventory: 9681
Minimum: 1
Total Price: USD $0.98
Unit Price: USD $0.98473
≥1 USD $0.98473
≥10 USD $0.92899
≥100 USD $0.87641
≥500 USD $0.8268
≥1000 USD $0.78
≥3000 USD $0.73585
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series Trench?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Reach Compliance Code unknown
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 500W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 500W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4530pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 60A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 150A
Avalanche Energy Rating (Eas) 700 mJ
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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