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IPW60R120C7XKSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 19A TO247-3
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Inventory: 9495
Minimum: 1
Total Price: USD $27.65
Unit Price: USD $27.64975
≥1 USD $27.64975
≥10 USD $22.68695
≥100 USD $21.97825
≥500 USD $21.2686
≥1000 USD $20.5599
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS? C7
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 92W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 390μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 400V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 19A
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.12Ohm
Pulsed Drain Current-Max (IDM) 66A
Avalanche Energy Rating (Eas) 78 mJ
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