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STB200NF04L-1
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 40V 120A I2PAK
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Inventory: 6661
Minimum: 1
Total Price: USD $3.4
Unit Price: USD $3.39625
≥1 USD $3.39625
≥10 USD $2.7873
≥100 USD $2.6999
≥500 USD $2.6125
≥1000 USD $2.52605
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET? II
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STB200N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Turn On Delay Time 37 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 4.5V
Rise Time 270ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 1400 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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