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STD5NK52ZD-1

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET N Ch 520V 1.22 Ohm 4.4A
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Inventory: 7523
Minimum: 1
Total Price: USD $4.56
Unit Price: USD $4.5638
≥1 USD $4.5638
≥10 USD $3.7449
≥100 USD $3.62805
≥500 USD $3.5112
≥1000 USD $3.3934

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.22Ohm
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Gate Charge (Qg) (Max) @ Vgs 16.9nC @ 10V
Rise Time 13.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 23.1 ns
Continuous Drain Current (ID) 4.4A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 520V
Pulsed Drain Current-Max (IDM) 17.6A
Avalanche Energy Rating (Eas) 170 mJ

Compliance

RoHS Status ROHS3 Compliant

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