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STB25NM60N-1
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 21A I2PAK
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Inventory: 6723
Minimum: 1
Total Price: USD $1.32
Unit Price: USD $1.3167
≥1 USD $1.3167
≥10 USD $1.08015
≥100 USD $1.0469
≥500 USD $1.0127
≥1000 USD $0.97945
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Series MDmesh? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 20A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 50V
Current - Continuous Drain (Id) @ 25°C 21A Tc
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Rise Time 18ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 21A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.16Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 84A
Avalanche Energy Rating (Eas) 850 mJ
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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