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IRF9Z34S

Vishay Siliconix
RoHS
/
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 60V 18A D2PAK
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Inventory: 5883
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.551985
≥1 USD $0.551985
≥10 USD $0.520743
≥100 USD $0.491271
≥500 USD $0.463457
≥1000 USD $0.437227

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK
Weight 1.437803g

Dimensions

Height 4.83mm
Length 10.67mm
Width 9.65mm

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -18A
Number of Channels 1
Power Dissipation-Max 3.7W Ta 88W Tc
Element Configuration Single
Turn On Delay Time 18 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 140mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 120ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 58 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Input Capacitance 1.1nF
Drain to Source Resistance 140mOhm
Rds On Max 140 mΩ

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