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IRF730A
Vishay SiliconixRoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 400V 5.5A TO-220AB
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Inventory: 3028
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.27645
≥1 USD $0.27645
≥10 USD $0.22705
≥100 USD $0.2204
≥500 USD $0.2128
≥1000 USD $0.20615
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating 5.5A
Number of Channels 1
Power Dissipation-Max 74W Tc
Element Configuration Single
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.5A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 400V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 5.5A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Input Capacitance 600pF
Drain to Source Resistance 1Ohm
Rds On Max 1 Ω
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