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IRF620S
Vishay SiliconixRoHS
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Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 5.2A D2PAK
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Inventory: 7534
Minimum: 1
Total Price: USD $1.37
Unit Price: USD $1.368
≥1 USD $1.368
≥10 USD $1.1229
≥100 USD $1.08775
≥500 USD $1.0526
≥1000 USD $1.01745
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Weight 1.437803g
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 5.2A
Number of Channels 1
Power Dissipation-Max 3W Ta 50W Tc
Element Configuration Single
Power Dissipation 50W
Turn On Delay Time 7.2 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.2A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 22ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 5.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 260pF
Drain to Source Resistance 800mOhm
Rds On Max 800 mΩ
Dimensions
Height 4.83mm
Length 10.67mm
Width 9.65mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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