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IRLL3303TR
Infineon TechnologiesRoHS
/
Package TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 4.6A SOT223
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Inventory: 3180
Minimum: 1
Total Price: USD $0.33
Unit Price: USD $0.3325
≥1 USD $0.3325
≥10 USD $0.27265
≥100 USD $0.2641
≥500 USD $0.25555
≥1000 USD $0.247
Technical Details
Physical
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 31m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.6A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 4.6A
Drain-source On Resistance-Max 0.031Ohm
Pulsed Drain Current-Max (IDM) 37A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 140 mJ
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