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IRFBE30
Vishay SiliconixRoHS
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Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB
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Inventory: 5320
Minimum: 1
Total Price: USD $0.97
Unit Price: USD $0.9671
≥1 USD $0.9671
≥10 USD $0.79325
≥100 USD $0.76855
≥500 USD $0.74385
≥1000 USD $0.71915
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 4.1A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.1A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 4.1A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Input Capacitance 1.3nF
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
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