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IRFPE30
Vishay SiliconixRoHS
/
Package TO-247-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 4.1A TO-247AC
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Inventory: 3899
Minimum: 1
Total Price: USD $39.91
Unit Price: USD $39.9095
≥1 USD $39.9095
≥10 USD $32.7465
≥100 USD $31.72335
≥500 USD $30.69925
≥1000 USD $29.6761
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Dimensions
Height 20.7mm
Length 15.87mm
Width 5.31mm
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 4.1A
Number of Channels 1
Power Dissipation-Max 125W Tc
Element Configuration Single
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.1A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 33ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 82 ns
Continuous Drain Current (ID) 4.1A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.3nF
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
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