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IRLD120
Vishay SiliconixRoHS
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Package 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 1.3A 4-DIP
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Inventory: 5586
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥100 USD $0.66025
≥500 USD $0.6384
≥1000 USD $0.6175
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Dimensions
Height 3.37mm
Length 5mm
Width 6.29mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2016
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 270mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 1.3A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.3W Ta
Power Dissipation 1.3W
Turn On Delay Time 9.8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.3A Ta
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 64ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4V 5V
Vgs (Max) ±10V
Fall Time (Typ) 64 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 100V
Input Capacitance 490pF
Drain to Source Resistance 270mOhm
Rds On Max 270 mΩ
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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