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PH3230S,115
Nexperia USA Inc.RoHS
/
Package SC-100, SOT-669
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 100A LFPAK
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Inventory: 6354
Minimum: 1
Total Price: USD $2.81
Unit Price: USD $2.80725
≥1 USD $2.80725
≥10 USD $2.30375
≥100 USD $2.23155
≥500 USD $2.1603
≥1000 USD $2.0881
Technical Details
Physical
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Surface Mount YES
Transistor Element Material SILICON
Technical
Packaging Cut Tape (CT)
Published 2009
Series TrenchMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G4
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 10V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 5V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 100A
JEDEC-95 Code MO-235AA
Drain Current-Max (Abs) (ID) 107A
Drain-source On Resistance-Max 0.0065Ohm
Pulsed Drain Current-Max (IDM) 428A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 2.5 mJ
Power Dissipation-Max (Abs) 62.5W
Compliance
RoHS Status RoHS Compliant
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