Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
IRF9620
Vishay SiliconixRoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 200V 3.5A TO-220AB
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 5481
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.41515
≥1 USD $0.41515
≥10 USD $0.34105
≥100 USD $0.32965
≥500 USD $0.3192
≥1000 USD $0.30875
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Power Dissipation 40W
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.5A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 25ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Input Capacitance 350pF
Drain to Source Resistance 1.5Ohm
Rds On Max 1.5 Ω
Alternative Model
Recommended For You