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IRFD9210
Vishay SiliconixRoHS
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Package 4-DIP (0.300, 7.62mm)
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 200V 0.4A 4-DIP
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Inventory: 3031
Minimum: 1
Total Price: USD $0.5
Unit Price: USD $0.4978
≥1 USD $0.4978
≥10 USD $0.4085
≥100 USD $0.39615
≥500 USD $0.38285
≥1000 USD $0.3705
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1W Ta
Power Dissipation 1W
Turn On Delay Time 8 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 400mA Ta
Gate Charge (Qg) (Max) @ Vgs 8.9nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 400mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -200V
Input Capacitance 170pF
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
Dimensions
Height 3.37mm
Length 5mm
Width 6.29mm
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
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