Welcome to AAA CHIPS! ｜ info@3achips.com
- English
Account & Orders
New Account? Start here
IRF9530
Vishay SiliconixRoHS
/
Package TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 12A TO-220AB
PDF
/
Favorite
Payment Methods:
Delivery Services:
Pricing & Ordering
Inventory: 9633
Minimum: 1
Total Price: USD $0.22
Unit Price: USD $0.22135
≥1 USD $0.22135
≥10 USD $0.1824
≥100 USD $0.1767
≥500 USD $0.171
≥1000 USD $0.1653
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -100V
Technology MOSFET (Metal Oxide)
Current Rating -12A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 88W Tc
Element Configuration Single
Power Dissipation 88W
Turn On Delay Time 12 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 300mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 52ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Input Capacitance 860pF
Drain to Source Resistance 300mOhm
Rds On Max 300 mΩ
Dimensions
Height 9.01mm
Length 10.41mm
Width 4.7mm
Compliance
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
Recommended For You