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BUK95180-100A,127
NXP USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 11A TO220AB
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Inventory: 7810
Minimum: 1
Total Price: USD $2.25
Unit Price: USD $2.251225
≥1 USD $2.251225
≥10 USD $2.123793
≥100 USD $2.003578
≥500 USD $1.890169
≥1000 USD $1.783173
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series TrenchMOS?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 54W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 173m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 619pF @ 25V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±15V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.2Ohm
Pulsed Drain Current-Max (IDM) 44A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 1.5 mJ
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