Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 19m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 888pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 8A
Drain Current-Max (Abs) (ID) 8.5A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate