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SI4966DY-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 20V 7.1A 2W
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Inventory: 7392
Minimum: 1
Total Price: USD $0.3
Unit Price: USD $0.30495
≥1 USD $0.30495
≥10 USD $0.24985
≥100 USD $0.24225
≥500 USD $0.23465
≥1000 USD $0.22705
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series TrenchFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 25mOhm
Terminal Finish MATTE TIN
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI4966
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 40 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 25m Ω @ 7.1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V
Rise Time 40 ns
Fall Time (Typ) 40 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 7.1A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 40A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 600 mV
Compliance
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.5494mm
Length 5mm
Width 3.9878mm
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