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FDS6994S
ON SemiconductorRoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC N T/R
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Inventory: 3406
Minimum: 1
Total Price: USD $0.17
Unit Price: USD $0.16625
≥1 USD $0.16625
≥500 USD $0.1368
≥1000 USD $0.13205
≥2000 USD $0.12825
≥5000 USD $0.1235
≥10000 USD $0.11115
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 187mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?, SyncFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 21MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 900mW
Terminal Form GULL WING
Current Rating 8.2A
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 6.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6.9A 8.2A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Rise Time 8 ns
Fall Time (Typ) 17 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 8.2A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 6.9A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
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