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FDMA510PZ
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 6-VDFN Exposed Pad
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 7.8A 6-MICROFET
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Inventory: 6000
Minimum: 1
Total Price: USD $1.05
Unit Price: USD $1.052367
≥1 USD $1.052367
≥10 USD $0.992808
≥100 USD $0.936605
≥500 USD $0.883597
≥1000 USD $0.833579
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 30mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 30MOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 2.4W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 7.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 10V
Current - Continuous Drain (Id) @ 25°C 7.8A Ta
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 64 ns
Turn-Off Delay Time 125 ns
Continuous Drain Current (ID) -7.8A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 24A
Nominal Vgs -700 mV
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 750μm
Length 2mm
Width 2mm
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