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SI2316DS-T1-E3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET 30V 3.4A 0.96W 50mohm @ 10V
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Inventory: 8221
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.11115
≥1 USD $0.11115
≥500 USD $0.0912
≥1000 USD $0.08835
≥2000 USD $0.0855
≥5000 USD $0.08265
≥10000 USD $0.0741
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 50mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Voltage 30V
Power Dissipation-Max 700mW Ta
Element Configuration Single
Current 2A
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 800mV @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.9A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Rise Time 9 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 3.4A
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 800 mV
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 1.02mm
Length 3.04mm
Width 1.4mm
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