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SI2328DS-T1-GE3
Vishay SiliconixRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 1.15A SOT-23
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Inventory: 4727
Minimum: 1
Total Price: USD $1.16
Unit Price: USD $1.1552
≥1 USD $1.1552
≥10 USD $0.9481
≥100 USD $0.9177
≥500 USD $0.88825
≥1000 USD $0.8588
Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 730mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 730mW
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 250m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.15A Ta
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Rise Time 11 ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 9 ns
Continuous Drain Current (ID) 1.15A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.25Ohm
Dimensions
Height 1.02mm
Length 3.04mm
Width 1.4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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