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BSP250,115
Nexperia USA Inc.RoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
NEXPERIA - BSP250,115 - MOSFET Transistor, P Channel, -1 A, -30 V, 250 mohm, -10 V, -2.8 V RoHS Compliant: Yes
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Inventory: 5084
Minimum: 1
Total Price: USD $0.51
Unit Price: USD $0.51015
≥1 USD $0.51015
≥10 USD $0.41895
≥100 USD $0.40565
≥500 USD $0.39235
≥1000 USD $0.38
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.21.00.75
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.65W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 250m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 20V
Current - Continuous Drain (Id) @ 25°C 3A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) -2.8mA
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.4Ohm
Pulsed Drain Current-Max (IDM) 12A
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