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AUIRF7303QTR
Infineon TechnologiesRoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Transistors - FETs, MOSFETs - Arrays / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 5.3A 8SOIC
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Inventory: 4394
Minimum: 1
Total Price: USD $0.25
Unit Price: USD $0.245967
≥1 USD $0.245967
≥10 USD $0.232043
≥100 USD $0.218912
≥500 USD $0.206518
≥1000 USD $0.194834
Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 2.4W
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 2.9 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 3V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 515pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 6.2ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 7.8 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 5.3A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 4.9A
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Alternative Model
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