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FDC637AN
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Transistors - FETs, MOSFETs - Single / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 20V 6.2A SSOT-6
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Inventory: 8895
Minimum: 5
Total Price: USD $2.69
Unit Price: USD $0.5377
≥5 USD $0.5377
≥50 USD $0.4408
≥150 USD $0.4275
≥500 USD $0.41325
≥3000 USD $0.39995
≥6000 USD $0.35815
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Dimensions
Height 1mm
Length 3mm
Width 1.7mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 24mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 6.2A
Number of Elements 1
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1125pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6.2A Ta
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Rise Time 13 ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 6.2A
Threshold Voltage 820mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Nominal Vgs 820 mV
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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